Researchers have developed an experimental data storage system based on ferroelectric and antisegnetoelectric field-effect transistors. The new system requires minimal power consumption.
Engineers from the University of Tokyo have manufactured three-dimensional vertical-shaped field-effect transistors to create data storage devices. The new system, according to the developers, is characterized by high data storage density and low power consumption.
The experimental three-dimensional multilayer memory cell is based on vertical field-effect transistors with an oxide-semiconductor channel. Inside the channel, the researchers applied layers of hafnium oxide (ferroelectric) and indium oxide (antisegnetoelectric).
The created device uses ferroelectricity (spontaneous polarization in crystals) to store data. Information is stored by the degree of polarization in the ferroelectric layer, which can be read by the system due to changes in electrical resistance. The developers explain that ferroelectrics have electric dipoles that are most stable when aligned in one direction. Hafnium oxide provides spontaneous alignment of dipoles.
The researchers say that by using an antisegnetoelectric instead of a ferroelectric, they found that only a tiny total charge is required for erasure, which increases the efficiency of data recording.
The authors of the paper presented at the conference of the Institute of Electrical and Electronics Engineers report that the created experimental device works stably for at least 1000 recording cycles.
Scientists believe that the combination of such experimental modules will help create low-power storage systems for consumer electronics of the Internet of Things.